{"title":"故障分析挑战","authors":"Larry Wagner","doi":"10.1109/IPFA.2001.941451","DOIUrl":null,"url":null,"abstract":"Semiconductor trends as embodied in the International Technology Roadmap for Semiconductors (ITRS) provides a guide for the challenges facing the failure analysis community. The technical challenges fall primarily into two categories: failure site isolation and physical analysis. The failure site isolation challenges are driven primarily by the device complexity and reduced accessibility of circuit nets. Additional challenges arise due to the increase in device operating speed and pin count. The challenges in physical analysis are driven primarily by smaller device feature sizes and by the host of new materials being introduced. In addition to the technical challenges, infrastructure changes are also likely to occur. The likely industry paths for addressing these challenges are discussed. The International Sematech Product Analysis Forum (Joseph et al, 2000) has identified ten primary challenges for the future of the failure analysis in the semiconductor industry: localization and electrical characterization; deprocessing techniques for new materials; system-on-a-chip; imaging of small defects and structures; detection and characterization of nonvisual defects; verification and test; globally dispersed entities as virtual factory; fault isolation and simulation software; cost of failure analysis; complexity and volume of data. These challenges have been correlated to the Technology Working Group Difficult Challenge table in the ITRS.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Failure analysis challenges\",\"authors\":\"Larry Wagner\",\"doi\":\"10.1109/IPFA.2001.941451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semiconductor trends as embodied in the International Technology Roadmap for Semiconductors (ITRS) provides a guide for the challenges facing the failure analysis community. The technical challenges fall primarily into two categories: failure site isolation and physical analysis. The failure site isolation challenges are driven primarily by the device complexity and reduced accessibility of circuit nets. Additional challenges arise due to the increase in device operating speed and pin count. The challenges in physical analysis are driven primarily by smaller device feature sizes and by the host of new materials being introduced. In addition to the technical challenges, infrastructure changes are also likely to occur. The likely industry paths for addressing these challenges are discussed. The International Sematech Product Analysis Forum (Joseph et al, 2000) has identified ten primary challenges for the future of the failure analysis in the semiconductor industry: localization and electrical characterization; deprocessing techniques for new materials; system-on-a-chip; imaging of small defects and structures; detection and characterization of nonvisual defects; verification and test; globally dispersed entities as virtual factory; fault isolation and simulation software; cost of failure analysis; complexity and volume of data. These challenges have been correlated to the Technology Working Group Difficult Challenge table in the ITRS.\",\"PeriodicalId\":297053,\"journal\":{\"name\":\"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2001.941451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2001.941451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25

摘要

国际半导体技术路线图(ITRS)所体现的半导体趋势为失效分析社区面临的挑战提供了指南。技术挑战主要分为两类:故障现场隔离和物理分析。故障现场隔离的挑战主要是由设备的复杂性和电路网络的可访问性降低驱动的。由于器件运行速度和引脚数的增加,还会出现其他挑战。物理分析中的挑战主要是由较小的设备特征尺寸和大量新材料的引入所驱动的。除了技术挑战之外,基础设施也可能发生变化。讨论了解决这些挑战的可能的行业路径。国际Sematech产品分析论坛(Joseph等人,2000)已经确定了半导体行业失效分析未来的十大主要挑战:本地化和电气表征;新材料的预处理技术;系统级芯片;小缺陷和结构的成像;非视觉缺陷的检测与表征;验证和测试;全球分散的实体作为虚拟工厂;故障隔离与仿真软件;失效成本分析;数据的复杂性和数量。这些挑战与ITRS中的技术工作组困难挑战表相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Failure analysis challenges
Semiconductor trends as embodied in the International Technology Roadmap for Semiconductors (ITRS) provides a guide for the challenges facing the failure analysis community. The technical challenges fall primarily into two categories: failure site isolation and physical analysis. The failure site isolation challenges are driven primarily by the device complexity and reduced accessibility of circuit nets. Additional challenges arise due to the increase in device operating speed and pin count. The challenges in physical analysis are driven primarily by smaller device feature sizes and by the host of new materials being introduced. In addition to the technical challenges, infrastructure changes are also likely to occur. The likely industry paths for addressing these challenges are discussed. The International Sematech Product Analysis Forum (Joseph et al, 2000) has identified ten primary challenges for the future of the failure analysis in the semiconductor industry: localization and electrical characterization; deprocessing techniques for new materials; system-on-a-chip; imaging of small defects and structures; detection and characterization of nonvisual defects; verification and test; globally dispersed entities as virtual factory; fault isolation and simulation software; cost of failure analysis; complexity and volume of data. These challenges have been correlated to the Technology Working Group Difficult Challenge table in the ITRS.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
相关文献
二甲双胍通过HDAC6和FoxO3a转录调控肌肉生长抑制素诱导肌肉萎缩
IF 8.9 1区 医学Journal of Cachexia, Sarcopenia and MusclePub Date : 2021-11-02 DOI: 10.1002/jcsm.12833
Min Ju Kang, Ji Wook Moon, Jung Ok Lee, Ji Hae Kim, Eun Jeong Jung, Su Jin Kim, Joo Yeon Oh, Sang Woo Wu, Pu Reum Lee, Sun Hwa Park, Hyeon Soo Kim
具有疾病敏感单倍型的非亲属供体脐带血移植后的1型糖尿病
IF 3.2 3区 医学Journal of Diabetes InvestigationPub Date : 2022-11-02 DOI: 10.1111/jdi.13939
Kensuke Matsumoto, Taisuke Matsuyama, Ritsu Sumiyoshi, Matsuo Takuji, Tadashi Yamamoto, Ryosuke Shirasaki, Haruko Tashiro
封面:蛋白质组学分析确定IRSp53和fastin是PRV输出和直接细胞-细胞传播的关键
IF 3.4 4区 生物学ProteomicsPub Date : 2019-12-02 DOI: 10.1002/pmic.201970201
Fei-Long Yu, Huan Miao, Jinjin Xia, Fan Jia, Huadong Wang, Fuqiang Xu, Lin Guo
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Software aided failure analysis using ATPG tool Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs Single contact optical beam induced currents (SCOBIC)-technique and applications Failure analysis challenges
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1