在GaSb(001)衬底上选择性面积外延生长InAs/AlGaSb Esaki隧道二极管

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880530

L. Desplanque, Xianglei Han, M. Fahed, V. Chinni, D. Troadec, M. Chauvat, P. Ruterana, X. Wallart

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引用次数: 1

摘要

我们报道了在GaSb(001)衬底上实现AlGaSb/InAs Esaki隧道二极管。InAs的选择性区域分子束外延用于将二极管的面积定义到亚微米尺寸。峰值电流密度可达1.3 MA/cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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