阳极氧化多孔硅的电学和结构特性

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI:10.1109/SMICND.1996.557350

M. Ciurea, A. Pentia, M. Lazar, A. Belu-Marian, F. Zavaliche, R. Mănăila

{"title":"阳极氧化多孔硅的电学和结构特性","authors":"M. Ciurea, A. Pentia, M. Lazar, A. Belu-Marian, F. Zavaliche, R. Mănăila","doi":"10.1109/SMICND.1996.557350","DOIUrl":null,"url":null,"abstract":"The temperature dependence of the dark conductivity (between 150 and 300 K) and X-ray diffraction were measured on porous silicon with different porosities. It was found that the conduction mechanism depends on porosity. X-ray diffraction have revealed a lattice parameter increase, related to surface oxidation.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and structural properties of anodized porous silicon\",\"authors\":\"M. Ciurea, A. Pentia, M. Lazar, A. Belu-Marian, F. Zavaliche, R. Mănăila\",\"doi\":\"10.1109/SMICND.1996.557350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The temperature dependence of the dark conductivity (between 150 and 300 K) and X-ray diffraction were measured on porous silicon with different porosities. It was found that the conduction mechanism depends on porosity. X-ray diffraction have revealed a lattice parameter increase, related to surface oxidation.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

测量了不同孔隙率多孔硅的暗电导率(150 ~ 300 K)和x射线衍射的温度依赖性。研究发现，导电机制与孔隙率有关。x射线衍射显示晶格参数增加，与表面氧化有关。

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Electrical and structural properties of anodized porous silicon

The temperature dependence of the dark conductivity (between 150 and 300 K) and X-ray diffraction were measured on porous silicon with different porosities. It was found that the conduction mechanism depends on porosity. X-ray diffraction have revealed a lattice parameter increase, related to surface oxidation.

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1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings

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