LFET和VFET高性能RC延迟分析

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242301

Changbeom Woo, Jongsu Kim, Myounggon Kang, Hyungcheol Shin

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引用次数: 0

摘要

本文研究了横向场效应管(LFET)和垂直场效应管(VFET)中单通道和多通道的RC延迟。它已经证实，无论通道数量如何，sce都是恒定的。由于所有结构都具有相同的栅极长度和间隔长度，因此它们具有相同的栅极可控性。另一方面，RC延迟取决于结构。由于VFET的寄生电容较大，其RC延迟较差。因此，在高性能方面，LFET比VFET更有前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of RC delay for high performance in LFET and VFET

In this paper, we have investigated RC delay not only on single channel but also on multi-channels in lateral FET (LFET) and vertical FET (VFET). It has verified that there is always constant for SCEs regardless of the number of channels. Since all structures have the same gate length and spacer length, they have the same gate controllability. On the other hand, RC delay depends on the structure. Because VFET has more parasitic capacitance, it shows poor RC delay. As a result, LFET is more promising than VFET in high performance.

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2017 Silicon Nanoelectronics Workshop (SNW)

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