基于衬底过刻效应的非偏振导模谐振滤波器的模式分裂

M. Saleem, S. Honkanen, J. Turunen
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引用次数: 3

摘要

研究了衬底过蚀刻对亚波长氧化钛(TiO2)导模共振滤波器(TiO2- gmrfs)谐振特性的影响。TiO2-GMRF被设计和制造为具有非极化行为,这强烈依赖于衬底(熔融二氧化硅)过蚀刻深度。对于共振时的非极化光栅,TE模式和tm模式具有相同的传播常数。然而,过蚀刻衬底效应会导致简并模式的分裂,对此进行了理论和实验研究。在严格计算电磁衍射理论的基础上,采用傅里叶模态法(FMM)设计了设计波长为850 nm的TiO2-SiO2 GMRFs。采用原子层沉积(ALD)、电子束光刻(EBL)和反应离子刻蚀(RIE)制备了TiO2-SiO2光栅,并通过扫描电子显微镜(SEM)和光谱椭偏仪对其进行了结构表征。通过逐渐增加熔融石英的过刻深度并测量TE-和tm模式的分裂程度,制备了几个光栅样品。计算得到的谐振波长谱移与实验测量的共振波长谱移非常吻合,可以用来描述非偏振光栅的模式分裂。
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Mode-splitting of a non-polarizing guided mode resonance filter by substrate overetching effect
We investigate substrate overetch effect on resonance properties of sub-wavelength titanium oxide (TiO2) Guided Mode Resonance Filters (TiO2-GMRFs). The TiO2-GMRF is designed and fabricated to possess a non-polarizing behavior, which is strongly dependent on substrate (fused silica) overetch depth. For non-polarizing gratings at resonance, TE- and TM-modes have the same propagation constants. However, an overetch substrate effect results in splitting of the degenerate modes, which is studied theoretically and experimentally. The TiO2-SiO2 GMRFs are designed by Fourier Modal method (FMM) based on the rigorous calculation of electromagnetic diffraction theory at a designed wavelength of 850 nm. The TiO2-SiO2 gratings are fabricated by Atomic Layer Deposition (ALD), Electron Beam Lithography (EBL), and Reactive Ion Etching (RIE), and they are subsequently characterized structurally by Scanning Electron Microscopy (SEM) and optically by a spectroscopic ellipsometer. Several grating samples are fabricated by gradually increasing the overetch depth into fused silica and measuring the extent of TE- and TM-mode-splitting. A close agreement between the calculated and experimentally measured resonance wavelength spectral shift is found to describe the mode splitting of non-polarizing gratings.
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