L. H. Willems van Beveren, J. McCallum, H. Tan, C. Jagadish
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Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.
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