锗mosfet栅极介质的高掺杂活化超浅结和GeO2界面层

68th Device Research Conference Pub Date : 2010-06-21 DOI:10.1109/DRC.2010.5551970

G. Thareja, S. Chopra, B. Adams, N. Patil, Y. Ta, P. Porshnev, Y. Kim, S. Moffatt, D. Loftis, R. Brennan, G. Goodman, I. Abdelrehim, K. Saraswat, Y. Nishi

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引用次数: 2

摘要

利用等离子体浸没离子注入技术首次在锗中制备了n型和p型掺杂剂的超浅结(xj < 10nm)。采用激光热处理技术对所有掺杂原子(P/As/Sb/B)实现了高电活化(>1×1020 cm−3)。我们还展示了超薄(0.6nm)、高质量的栅极介电介质的GeO2界面层，它为Ge高k N/P mosfet提供了与衬底方向无关的Dit和迁移率增强。

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Ultra shallow junctions with high dopant activation and GeO2 interfacial layer for gate dielectric in germanium MOSFETs

For the first time, ultra shallow junctions (xj < 10nm) are demonstrated using Plasma Immersion Ion Implantation for both n-type and p-type dopants in Ge. High electrical activation (>1×10²⁰ cm⁻³) is achieved for all dopant atoms (P/As/Sb/B) using Laser Thermal Processing. We also show ultrathin (0.6nm), high quality GeO2 interfacial layer for gate dielectric, which provides substrate orientation independent Dit and mobility enhancement for Ge high-k N/P MOSFETs.

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68th Device Research Conference

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