非抛物带结构对半导体石墨烯纳米带载流子输运的影响

N. A. Amin, Z. Johari, M. Ahmadi, R. Ismail, D. Chek, E. Ng
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摘要

石墨烯纳米带的能带能在达到最小能带能时呈抛物线分布。否则,它是非抛物线型的。在抛物带结构中,采用费米-狄拉克积分来研究载流子统计量,而对于非抛物带结构,则需要数值解。数值计算结果表明,在非简并状态下,费米能是温度的函数,与载流子浓度无关。然而,在退化状态下,结果有所不同。在强简并态中,费米能量是载流子浓度的函数,适合于给定的维数,但与温度无关。我们还报道了带结构抛物线部分的饱和速度的显著特征。在非简并状态下,本征速度是合适的热速度,随温度增加而增加,但与载流子浓度无关。相反,在简并状态下,这个固有速度是费米速度,它与温度无关,但强烈依赖载流子浓度。
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Nonparabolic band structure effect on carrier transport in semiconducting graphene nanoribbons
The band energy of graphene nanoribbon is parabolic when reaching the minimum band energy. Otherwise, it is nonparabolic. In the parabolic band structure, Fermi-Dirac integrals are employed to study the carrier statistic whereas for nonparabolic part, numerical solutions are needed. Numerical method shows Fermi energy with respect to the band edge is a function of temperature that independent of the carrier concentration in the nondegenerate regime. However, the results differ in degenerate regime. In the strongly degenerate regime, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature. We also report the salient features of the saturation velocity in parabolic part of the band structure. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. Conversely in degenerate regime, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration.
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