A. Umezawa, S. Atsumi, M. Kuriyama, H. Banba, C. Hoshino, K. Naruke, S. Yamada, Y. Ohshima, M. Oshikiri, Y. Hiura, T. Suzuki, K. Yoshikawa
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A new self-data-refresh scheme for a sector erasable 16-Mb flash EEPROM
A newly developed refresh scheme is introduced in a 16-Mb flash EEPROM. By providing each refresh block with its own nonvolatile element, excessive voltage stress of the flag element can be eliminated during the erase/program cycling. A small sector erase can be realized in the 16-Mb flash memory with this scheme. The EEPROM is realised in a 0.6 /spl mu/m single-metal triple-well CMOS process technology.
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