60 GHz InGaP/GaAs HBT推-推- MMIC VCO

Jeong‐Geun Kim, Donghyun Baek, S. Jeon, Jaewoo Park, Songcheol Hong
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引用次数: 18

摘要

提出了一种完全集成的60 GHz推推压控振荡器(VCO)。VCO采用市售的InGsP/GsAs异质结双极晶体管(HBT)技术实现,f/sub T/为60 GHz, f/sub MAX/为110 GHz。为了产生负电阻,采用共基极电感反馈拓扑。采用推-推结构实现v波段的高振荡频率。所设计的推推式压控振荡器的振荡频率为60ghz。通过对微带线谐振器和电感器的电磁仿真,这与预测的振荡频率非常接近。峰值输出功率为- 4dbm。推推信号为60 GHz时,相位噪声为-93 dBc/Hz,基频为30 GHz时,相位噪声为-102 dBc/Hz。实现了1.6 GHz左右的宽频率调谐范围。在考虑布局的情况下,还实现了0.90 /spl倍/ 0.87 mm/sup 2/的小芯片。
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A 60 GHz InGaP/GaAs HBT push-push MMIC VCO
A fully integrated 60 GHz push-push voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGsP/GsAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance, common base inductive feedback topology is used. Push-push configuration is employed to achieve high oscillation frequency of V-band. The presented push-push VCO provides the oscillation frequency of 60 GHz. This is very close to the predicted oscillation frequency owing to the EM simulation of the microstrip line resonator and inductor. The peak output power is -4 dBm. The phase noise is -93 dBc/Hz at 1 MHz offset frequency of the push-push signal of 60 GHz and -102 dBc/Hz for the fundamental frequency of 30 GHz. The wide frequency tuning range is achieved about 1.6 GHz. The small chip of 0.90 /spl times/ 0.87 mm/sup 2/ is also achieved with the layout consideration.
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