纳米复合C-Ni场致发射体的形貌与结构

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650263

E. Czerwosz, I. Iwanejko, A. Kamińska, J. Rymarczyk, J. Keczkowska, M. Suchańska, F. Craciunoiu, F. Comanescu

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摘要

本文介绍了不同镍含量C-Ni纳米复合膜的结构和形貌研究结果。采用PVD法制备薄膜。用拉曼光谱和红外光谱对其结构进行了表征，并用原子力显微镜对其形貌进行了表征。当阳极阴极电压为3kV，阳极阴极距离为0.1mm时，这些薄膜的典型场发射电流为几µA(高达10µA)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Topography and structure of nanocomposite C-Ni field emitters

In this paper we present results of structural and topographical studies of C-Ni nanocomposite films with different Ni content. Films were obtained by PVD method. Their structure was investigated by Raman and FTIR spectroscopy and topography by AFM. Typical field emission current from these films is few µA (up to 10 µA) for 3kV anode-cathode voltage and 0.1mm anode-cathode distance.

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CAS 2010 Proceedings (International Semiconductor Conference)

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