175 GHz时6.3 dB增益的单级g波段HBT放大器

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964352

M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Rodwell

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引用次数: 8

摘要

我们报告了一种单级调谐放大器，在175 GHz时显示6.3 dB的峰值小信号增益。该放大器采用基于转移衬底inp的HBT技术设计，其外推值f/sub max/创下了记录。放大器的每级增益是在该频段的任何晶体管技术中报道的最高的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz

We report a single-stage tuned amplifier that exhibits a peak small signal gain of 6.3 dB at 175 GHz. The amplifier was designed in a transferred-substrate InP-based HBT technology that has exhibited record values of extrapolated f/sub max/. The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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