{"title":"基于时间分辨模式空间的量子-刘维尔型方程在dgfet上的应用","authors":"L. Schulz, D. Schulz","doi":"10.23919/SISPAD49475.2020.9241644","DOIUrl":null,"url":null,"abstract":"The investigation of a time-resolved quantum transport analysis is a major issue for the future progress in engineering tailored nanoelectronic devices. In this contribution, the time dependence is addressed along with the single-time formulation of quantum mechanics based on the von-Neumann equation in center-mass coordinates. This equation is investigated utilizing a distinct set of basis functions leading to so-called Quantum-Liouville type equations, which are combined with the mode space approximation to investigate the time-resolved behavior of double gate field effect transistors including the self-consistent Hartree potential.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Time-Resolved Mode Space based Quantum-Liouville type Equations applied onto DGFETs\",\"authors\":\"L. Schulz, D. Schulz\",\"doi\":\"10.23919/SISPAD49475.2020.9241644\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The investigation of a time-resolved quantum transport analysis is a major issue for the future progress in engineering tailored nanoelectronic devices. In this contribution, the time dependence is addressed along with the single-time formulation of quantum mechanics based on the von-Neumann equation in center-mass coordinates. This equation is investigated utilizing a distinct set of basis functions leading to so-called Quantum-Liouville type equations, which are combined with the mode space approximation to investigate the time-resolved behavior of double gate field effect transistors including the self-consistent Hartree potential.\",\"PeriodicalId\":206964,\"journal\":{\"name\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SISPAD49475.2020.9241644\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Time-Resolved Mode Space based Quantum-Liouville type Equations applied onto DGFETs
The investigation of a time-resolved quantum transport analysis is a major issue for the future progress in engineering tailored nanoelectronic devices. In this contribution, the time dependence is addressed along with the single-time formulation of quantum mechanics based on the von-Neumann equation in center-mass coordinates. This equation is investigated utilizing a distinct set of basis functions leading to so-called Quantum-Liouville type equations, which are combined with the mode space approximation to investigate the time-resolved behavior of double gate field effect transistors including the self-consistent Hartree potential.