高速单电子存储器的仿真

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) Pub Date : 1998-10-19 DOI:10.1109/IWCE.1998.742696

H. Mizuta, K. Katayama, H. Muller, D. Williams

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引用次数: 2

摘要

提出了一种新的横向单电子存储器(L-SEM)结构及其高速写入操作，写入时间与传统dram相当。本文还介绍了分路栅极感MOSFET优良的亚阈特性。从电荷偏移的角度讨论了L-SEM电池结构的稳健性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation of high-speed single-electron memory

A novel lateral single electron memory (L-SEM) architecture and its high-speed write operation were demonstrated with a write time comparable to conventional DRAMs. Excellent subthreshold characteristics of the sense MOSFET with split gates were also presented. The robustness of the L-SEM cell structure was also discussed in terms of the offset charge issue.

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1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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