GaAs1−xSbx纳米线的生长与表征

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472400

X. Yuan, H. Tan, P. Parkinson, J. Wong-Leung, S. Breuer, Q. Gao, C. Jagadish

{"title":"GaAs1−xSbx纳米线的生长与表征","authors":"X. Yuan, H. Tan, P. Parkinson, J. Wong-Leung, S. Breuer, Q. Gao, C. Jagadish","doi":"10.1109/COMMAD.2012.6472400","DOIUrl":null,"url":null,"abstract":"We report the structural and optical characterization of GaAs1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth and characterization of GaAs1−xSbx nanowires\",\"authors\":\"X. Yuan, H. Tan, P. Parkinson, J. Wong-Leung, S. Breuer, Q. Gao, C. Jagadish\",\"doi\":\"10.1109/COMMAD.2012.6472400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the structural and optical characterization of GaAs1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了利用金属有机化学气相沉积(MOCVD)在GaAs (111)B衬底上生长GaAs - xsbx纳米线(NWs)的结构和光学特性。NWs垂直于基体，具有几乎无缺陷的闪锌矿(ZB)结构。微光致发光结果表明，NWs在约1.3 μm处具有较高的发射效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Growth and characterization of GaAs1−xSbx nanowires

We report the structural and optical characterization of GaAs1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

COMMAD 2012

自引率

0.00%

发文量