非易失性存储器应用的非化学计量ZrO/sub x/和SrTiO/sub x/的可逆电阻开关

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553048

Dongsoo Lee, Dooho Choi, Hyejung Choi, H. Sim, H. Hwang

{"title":"非易失性存储器应用的非化学计量ZrO/sub x/和SrTiO/sub x/的可逆电阻开关","authors":"Dongsoo Lee, Dooho Choi, Hyejung Choi, H. Sim, H. Hwang","doi":"10.1109/DRC.2005.1553048","DOIUrl":null,"url":null,"abstract":"The authors have investigated the resistance switching characteristics of non-stoichiometric ZrOx and STOx thin films for nonvolatile memory application. The non-stoichiometric ZrOx films were grown in a reactive sputtering method using Zr target and SrTiOx (STOx) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO3 target","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"2023 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reversible resistance switching of the non-stoichiometric ZrO/sub x/ and SrTiO/sub x/ for non-volatile memory applications\",\"authors\":\"Dongsoo Lee, Dooho Choi, Hyejung Choi, H. Sim, H. Hwang\",\"doi\":\"10.1109/DRC.2005.1553048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors have investigated the resistance switching characteristics of non-stoichiometric ZrOx and STOx thin films for nonvolatile memory application. The non-stoichiometric ZrOx films were grown in a reactive sputtering method using Zr target and SrTiOx (STOx) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO3 target\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"2023 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了用于非易失性存储器的非化学计量ZrOx和STOx薄膜的电阻开关特性。以Zr为靶材，采用反应溅射法制备了非化学计量ZrOx薄膜;以SrTiO3为靶材，采用脉冲激光沉积(PLD)法制备了SrTiOx (STOx)薄膜

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Reversible resistance switching of the non-stoichiometric ZrO/sub x/ and SrTiO/sub x/ for non-volatile memory applications

The authors have investigated the resistance switching characteristics of non-stoichiometric ZrO_x and STO_x thin films for nonvolatile memory application. The non-stoichiometric ZrO_x films were grown in a reactive sputtering method using Zr target and SrTiO_x (STO_x) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO₃ target

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

63rd Device Research Conference Digest, 2005. DRC '05.

自引率

0.00%

发文量

期刊最新文献

High-power stable field-plated AlGaN-GaN MOSHFETs A new four-terminal hybrid silicon/organic field-effect sensor device Tunnel junctions in GaN/AlN for optoelectronic applications Data retention behavior in the embedded SONOS nonvolatile memory cell Mobility and sub-threshold characteristics in high-mobility dual-channel strained Si/strainef SiGe p-MOSFETs