一种新型分段自适应MRAM温度监测仪

Yu’ang Wu, Mingyang Zhou, Hao Cai
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引用次数: 0

摘要

温度变化对设备的影响直接影响到存储器的性能,特别是在访问延迟和能耗方面。基于温度监测的温度自适应磁随机存取存储器(MRAM)消除了温度对存储性能的影响。然而,受磁隧道结(MTJ)器件特性和MRAM阵列工作模式的限制,更宽的工作温度给监控器的设计带来了挑战。本文基于MRAM阵列,采用分段检测的方法,提出了一种新型的温度监测仪,用于监测-55~125°C范围内的温度。仿真结果表明,该温度监测器在1.2μs内的温度检测精度可达5℃。
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A Novel Segmented Temperature Monitor for Adaptive MRAM
The influence of temperature change on device directly affects the memory performance, especially in access latency and energy consumption. Based on temperature monitor, temperature adaptive magnetic random access memory (MRAM) eliminates the impact of temperature on storage performance. However, limited by the characteristics of the magnetic tunnel junction (MTJ) device and the operating mode of the MRAM array, wider operating temperature brings challenges to the design of monitor. In this work, based on MRAM array, using the method of segmented detection, we propose a novel temperature monitor for monitoring temperature under -55~125°C. Simulation results show that the temperature monitor can detect the temperature with an accuracy of 5°C within 1.2μs.
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