Yukihiro Seki, Yanzhe Wang, Q. Thieu, S. Kuboya, S. Sanorpim, K. Onabe
{"title":"InPN薄膜在InP(001)衬底上的MOVPE生长","authors":"Yukihiro Seki, Yanzhe Wang, Q. Thieu, S. Kuboya, S. Sanorpim, K. Onabe","doi":"10.1109/ICIPRM.2010.5516039","DOIUrl":null,"url":null,"abstract":"Dilute-nitride alloy InPN films have been grown by metalorganic vapor phase epitaxy (MOVPE), and the N incorporation behavior is investigated by varying the major growth parameters. The grown-surface morphologies show that the 2-dimensional (2D) growth with atomically flat surfaces is obtained at 460–500°C with relatively high P supplies. The XRD analyses show that the N incorporation increases for lower growth temperatures and higher N/P ratios, and the N concentration up to 0.18% has been attained. The 150–170 nm-thick InPN films are coherently grown on InP(001) without lattice relaxation.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"260 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOVPE growth of InPN films on InP(001) substrates\",\"authors\":\"Yukihiro Seki, Yanzhe Wang, Q. Thieu, S. Kuboya, S. Sanorpim, K. Onabe\",\"doi\":\"10.1109/ICIPRM.2010.5516039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dilute-nitride alloy InPN films have been grown by metalorganic vapor phase epitaxy (MOVPE), and the N incorporation behavior is investigated by varying the major growth parameters. The grown-surface morphologies show that the 2-dimensional (2D) growth with atomically flat surfaces is obtained at 460–500°C with relatively high P supplies. The XRD analyses show that the N incorporation increases for lower growth temperatures and higher N/P ratios, and the N concentration up to 0.18% has been attained. The 150–170 nm-thick InPN films are coherently grown on InP(001) without lattice relaxation.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"260 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dilute-nitride alloy InPN films have been grown by metalorganic vapor phase epitaxy (MOVPE), and the N incorporation behavior is investigated by varying the major growth parameters. The grown-surface morphologies show that the 2-dimensional (2D) growth with atomically flat surfaces is obtained at 460–500°C with relatively high P supplies. The XRD analyses show that the N incorporation increases for lower growth temperatures and higher N/P ratios, and the N concentration up to 0.18% has been attained. The 150–170 nm-thick InPN films are coherently grown on InP(001) without lattice relaxation.
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