V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr
{"title":"cmos兼容自旋电子器件","authors":"V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr","doi":"10.1109/SBMICRO.2015.7298103","DOIUrl":null,"url":null,"abstract":"Silicon is perfectly suited for spin-driven applications. Recent progress and challenges regarding CMOS-compatible spin-based devices are reviewed. A realization of an intrinsic non-volatile logic-in-memory architecture in an MRAM array is demonstrated.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"338 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS-compatible spintronic devices\",\"authors\":\"V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr\",\"doi\":\"10.1109/SBMICRO.2015.7298103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon is perfectly suited for spin-driven applications. Recent progress and challenges regarding CMOS-compatible spin-based devices are reviewed. A realization of an intrinsic non-volatile logic-in-memory architecture in an MRAM array is demonstrated.\",\"PeriodicalId\":342493,\"journal\":{\"name\":\"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"338 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2015.7298103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2015.7298103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon is perfectly suited for spin-driven applications. Recent progress and challenges regarding CMOS-compatible spin-based devices are reviewed. A realization of an intrinsic non-volatile logic-in-memory architecture in an MRAM array is demonstrated.
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