R. Asadi, T. Zheng, G. Rughoobur, R. Bhattacharya, J. Browning, A. Akinwande, B. Gnade
{"title":"氧暴露对硅场发射极阵列形式的影响","authors":"R. Asadi, T. Zheng, G. Rughoobur, R. Bhattacharya, J. Browning, A. Akinwande, B. Gnade","doi":"10.1109/IVNC57695.2023.10188971","DOIUrl":null,"url":null,"abstract":"The impact of Oxygen (O<inf>2</inf>) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10<sup>−10</sup> Torr before 10–<sup>7</sup> Torr partial pressure of O<inf>2</inf> was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O<inf>2</inf> exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"310 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of O2 Exposure on Silicon Field Emitter Arrays Style\",\"authors\":\"R. Asadi, T. Zheng, G. Rughoobur, R. Bhattacharya, J. Browning, A. Akinwande, B. Gnade\",\"doi\":\"10.1109/IVNC57695.2023.10188971\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The impact of Oxygen (O<inf>2</inf>) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10<sup>−10</sup> Torr before 10–<sup>7</sup> Torr partial pressure of O<inf>2</inf> was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O<inf>2</inf> exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.\",\"PeriodicalId\":346266,\"journal\":{\"name\":\"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)\",\"volume\":\"310 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC57695.2023.10188971\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC57695.2023.10188971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of O2 Exposure on Silicon Field Emitter Arrays Style
The impact of Oxygen (O2) exposure on Silicon Field Emitter Arrays (Si-FEA) was studied. A 50×50 array of Silicon field emitters was tested at 1000V DC anode and 45V DC gate voltage in 6×10−10 Torr before 10–7 Torr partial pressure of O2 was introduced into the chamber. The results indicate that the anode current degradation rate is approximately 0.1 percent per Langmuir of O2 exposure. This study can provide guidelines for the vacuum packaging requirements of Si-FEAs.
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