嵌入式被动应用多层SrTiO3薄膜电容器的研制

Shuqiang Wang, A. Hattori, Y. Ozeki, H. Ogawa
{"title":"嵌入式被动应用多层SrTiO3薄膜电容器的研制","authors":"Shuqiang Wang, A. Hattori, Y. Ozeki, H. Ogawa","doi":"10.1109/ISAF.2007.4393306","DOIUrl":null,"url":null,"abstract":"Multilayered thin-film capacitors (MLTFC) with SrTiO3 (STO) dielectric and Pt electrode thin layers were fabricated on polycrystalline alumina substrates, in which amorphous STO dielectric thin layers with thicknesses of 100-300 nm were formed using a cost-effective aerosol chemical vapor deposition (ASCVD) method. The MLTFC with up to ten-layer dielectric layers and total thickness of 0.2-0.25 mm, reached capacitance densities of 100-900 nF/cm2. Further increase in capacitance density of the MLTFC was tried by reduction in thickness and crystallization of STO dielectric thin layers. Three forms of MLTFC (chips, sheets and substrates) are being developed for embedded passive applications.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of Multilayered SrTiO3 Thin-Film Capacitors For Embedded Passive Applications\",\"authors\":\"Shuqiang Wang, A. Hattori, Y. Ozeki, H. Ogawa\",\"doi\":\"10.1109/ISAF.2007.4393306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multilayered thin-film capacitors (MLTFC) with SrTiO3 (STO) dielectric and Pt electrode thin layers were fabricated on polycrystalline alumina substrates, in which amorphous STO dielectric thin layers with thicknesses of 100-300 nm were formed using a cost-effective aerosol chemical vapor deposition (ASCVD) method. The MLTFC with up to ten-layer dielectric layers and total thickness of 0.2-0.25 mm, reached capacitance densities of 100-900 nF/cm2. Further increase in capacitance density of the MLTFC was tried by reduction in thickness and crystallization of STO dielectric thin layers. Three forms of MLTFC (chips, sheets and substrates) are being developed for embedded passive applications.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

采用高性价比的气溶胶化学气相沉积(ASCVD)方法,在多晶氧化铝衬底上制备了SrTiO3 (STO)介质和Pt电极薄层的多层薄膜电容器(MLTFC)。MLTFC具有多达10层的介电层,总厚度为0.2-0.25 mm,电容密度达到100-900 nF/cm2。通过减小STO介电薄层的厚度和结晶,进一步提高了MLTFC的电容密度。三种形式的MLTFC(芯片,片和基板)正在开发用于嵌入式无源应用。
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Development of Multilayered SrTiO3 Thin-Film Capacitors For Embedded Passive Applications
Multilayered thin-film capacitors (MLTFC) with SrTiO3 (STO) dielectric and Pt electrode thin layers were fabricated on polycrystalline alumina substrates, in which amorphous STO dielectric thin layers with thicknesses of 100-300 nm were formed using a cost-effective aerosol chemical vapor deposition (ASCVD) method. The MLTFC with up to ten-layer dielectric layers and total thickness of 0.2-0.25 mm, reached capacitance densities of 100-900 nF/cm2. Further increase in capacitance density of the MLTFC was tried by reduction in thickness and crystallization of STO dielectric thin layers. Three forms of MLTFC (chips, sheets and substrates) are being developed for embedded passive applications.
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