A. Gutierrez-Aitken, P. Bhattacharya, Y.C. Chen, D. Pavlidis, T. Brock
{"title":"高速单片集成引脚modfet跨阻光电接收机","authors":"A. Gutierrez-Aitken, P. Bhattacharya, Y.C. Chen, D. Pavlidis, T. Brock","doi":"10.1109/CORNEL.1993.303111","DOIUrl":null,"url":null,"abstract":"The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode integrated with a 0.1 /spl mu/m gate length regrown pseudomorphic In/sub 0.60/Ga/sub 0.40/As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at /spl lambda/=1.55 /spl mu/m. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dB/spl Omega/ with a 800 /spl Omega/ feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dB/spl Omega/ with a 1.2 K/spl Omega/ feedback resistor.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High speed monolithically integrated pin-MODFET transimpedance photoreceivers\",\"authors\":\"A. Gutierrez-Aitken, P. Bhattacharya, Y.C. Chen, D. Pavlidis, T. Brock\",\"doi\":\"10.1109/CORNEL.1993.303111\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode integrated with a 0.1 /spl mu/m gate length regrown pseudomorphic In/sub 0.60/Ga/sub 0.40/As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at /spl lambda/=1.55 /spl mu/m. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dB/spl Omega/ with a 800 /spl Omega/ feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dB/spl Omega/ with a 1.2 K/spl Omega/ feedback resistor.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"140 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303111\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High speed monolithically integrated pin-MODFET transimpedance photoreceivers
The performance characteristics of transimpedance and transimpedance/voltage photoreceivers using an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode integrated with a 0.1 /spl mu/m gate length regrown pseudomorphic In/sub 0.60/Ga/sub 0.40/As MODFET realized by MBE have been investigated. The photodiode exhibits very low dark current and a responsivity of 0.6 A/W at /spl lambda/=1.55 /spl mu/m. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver with a transimpedance amplifier exhibits a FWHM value of 90 ps and a transimpedance gain of 45 dB/spl Omega/ with a 800 /spl Omega/ feedback resistor. This photoreceiver demonstrated 24 dB optical-to-electrical conversion gain at 9.3 GHz. The photoreceiver with a transimpedance/voltage amplifier shows a FWHM of 200 ps and a transimpedance gain of 63 dB/spl Omega/ with a 1.2 K/spl Omega/ feedback resistor.<>
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