基于深度神经网络的智能计算数据感知NAND闪存

K. Takeuchi
{"title":"基于深度神经网络的智能计算数据感知NAND闪存","authors":"K. Takeuchi","doi":"10.1109/IEDM.2017.8268470","DOIUrl":null,"url":null,"abstract":"This paper presents the data-aware NAND flash memories for intelligent computing. By recognizing the “value” of data stored in NAND flash, sophisticated data management such as storing important data in the higher reliable memory cell or adaptively optimizing the read reference voltage depending on the stress of each memory cell are realized. As a result, intelligent computing such as image recognition with deep neural network [1], data compression [2], data center storage [3] and disaggregated hybrid storage [4,5] are achieved.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"433 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Data-aware NAND flash memory for intelligent computing with deep neural network\",\"authors\":\"K. Takeuchi\",\"doi\":\"10.1109/IEDM.2017.8268470\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the data-aware NAND flash memories for intelligent computing. By recognizing the “value” of data stored in NAND flash, sophisticated data management such as storing important data in the higher reliable memory cell or adaptively optimizing the read reference voltage depending on the stress of each memory cell are realized. As a result, intelligent computing such as image recognition with deep neural network [1], data compression [2], data center storage [3] and disaggregated hybrid storage [4,5] are achieved.\",\"PeriodicalId\":412333,\"journal\":{\"name\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"433 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2017.8268470\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

提出了一种用于智能计算的数据感知型NAND闪存。通过识别存储在NAND闪存中的数据的“价值”,实现了将重要数据存储在可靠性更高的存储单元中或根据每个存储单元的应力自适应优化读取参考电压等复杂的数据管理。从而实现了深度神经网络图像识别[1]、数据压缩[2]、数据中心存储[3]、分解混合存储[4,5]等智能计算。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Data-aware NAND flash memory for intelligent computing with deep neural network
This paper presents the data-aware NAND flash memories for intelligent computing. By recognizing the “value” of data stored in NAND flash, sophisticated data management such as storing important data in the higher reliable memory cell or adaptively optimizing the read reference voltage depending on the stress of each memory cell are realized. As a result, intelligent computing such as image recognition with deep neural network [1], data compression [2], data center storage [3] and disaggregated hybrid storage [4,5] are achieved.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A novel triboelectric nanogenerator with high performance and long duration time of sinusoidal current generation Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition Energy-efficient all fiber-based local body heat mapping circuitry combining thermistor and memristor for wearable healthcare device
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1