3D物理设计中的通硅通孔管理:何时添加,添加多少?

M. Pathak, Young-Joon Lee, Thomas Moon, S. Lim
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引用次数: 77

摘要

在3D集成电路中,通过硅通孔(tsv)来连接堆叠在一起的不同晶片。这些TSV占用硅面积,比普通栅极的面积大得多。在本文中,我们讨论了三维设计中TSV管理的两个关键方面。首先,我们解决在设计中添加多少tsv的问题。由于tsv占用了大量的硅面积,因此在3D电路中使用最少数量的tsv是一个普遍的趋势。我们表明,这种方法不能给我们最好的可能结果。其次,我们解决了TSV插入问题。由于tsv占用硅面积,其位置在三维设计的放置阶段就确定了。然而,我们发现这不是TSV插入的最佳阶段。我们建议改变3D集成电路的物理设计流程,以解决现有TSV放置方法的局限性。我们所有的算法都与商业工具集成,我们的结果基于实际的GDSII布局进行验证。实验结果表明了方法的有效性。
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Through-silicon-via management during 3D physical design: When to add and how many?
In 3D integrated circuits through silicon vias (TSVs) are used to connect different dies stacked on top of each other. These TSV occupy silicon area and have significantly larger area than regular gates. In this paper, we address two critical aspects of TSV management in 3D designs. First, we address the problem of how many TSVs to add in a design. Since TSVs occupy significant silicon area, a general tendency has been to use a minimum number of TSVs in 3D circuits. We show that such an approach does not give us the best possible result. Second, we address the problem of TSV insertion. Because TSVs occupy silicon area, their location is decided during the placement stage of 3D design. However, we show that this is not the best possible stage for TSV insertion. We propose a change in the physical design flow for 3D integrated circuits to address the limitations of existing TSV placement methodology. All our algorithms are integrated with commercial tools, and our results are validated based on actual GDSII layouts. Our experimental results show the effectiveness of our methods.
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