{"title":"集成栅电极光控场发射阵列的研制","authors":"Toya Kera, N. Umeda, K. Iwami","doi":"10.1109/NEMS.2016.7758188","DOIUrl":null,"url":null,"abstract":"A field emitter array (FEA) with integrated gate electrode was fabricated on a transparent substrate for optical emission control. An array consisting of about 30000 emitters is arranged in a 3-mm-diameter area on a quartz-glass substrate. I-V characteristics were measured and electron emission regime was confirmed as field emission from Fowler-Nordheim analysis. Emission current was enhanced with laser irradiation at the wavelength of 532 nm, and the threshold voltage for field emission was reduced by 43 %. The maximum current enhancement factor was 4.3×106. The result obtained from this study is expected to be applied for optically-controlled field emitter array and future high throughput electron beam lithography.","PeriodicalId":150449,"journal":{"name":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of optically controlled field emitter array with integrated gate electrode\",\"authors\":\"Toya Kera, N. Umeda, K. Iwami\",\"doi\":\"10.1109/NEMS.2016.7758188\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A field emitter array (FEA) with integrated gate electrode was fabricated on a transparent substrate for optical emission control. An array consisting of about 30000 emitters is arranged in a 3-mm-diameter area on a quartz-glass substrate. I-V characteristics were measured and electron emission regime was confirmed as field emission from Fowler-Nordheim analysis. Emission current was enhanced with laser irradiation at the wavelength of 532 nm, and the threshold voltage for field emission was reduced by 43 %. The maximum current enhancement factor was 4.3×106. The result obtained from this study is expected to be applied for optically-controlled field emitter array and future high throughput electron beam lithography.\",\"PeriodicalId\":150449,\"journal\":{\"name\":\"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2016.7758188\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2016.7758188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of optically controlled field emitter array with integrated gate electrode
A field emitter array (FEA) with integrated gate electrode was fabricated on a transparent substrate for optical emission control. An array consisting of about 30000 emitters is arranged in a 3-mm-diameter area on a quartz-glass substrate. I-V characteristics were measured and electron emission regime was confirmed as field emission from Fowler-Nordheim analysis. Emission current was enhanced with laser irradiation at the wavelength of 532 nm, and the threshold voltage for field emission was reduced by 43 %. The maximum current enhancement factor was 4.3×106. The result obtained from this study is expected to be applied for optically-controlled field emitter array and future high throughput electron beam lithography.
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