用于Si, SiC和GaN器件的NPC和t型三电平变换器的损耗分析

K. Kumari, Swagata Mapa, R. Maheshwari
{"title":"用于Si, SiC和GaN器件的NPC和t型三电平变换器的损耗分析","authors":"K. Kumari, Swagata Mapa, R. Maheshwari","doi":"10.1109/PIICON49524.2020.9112873","DOIUrl":null,"url":null,"abstract":"Multilevel converters are widely used for its significant benefit of low harmonics and reduced switching losses compared to two-level converter. This paper presents a comparative evaluation of loss of two three-level inverter topologies, namely Neutral Point Clamped Converter (NPC) and T-type converter. The loss analysis are done for both topologies based on different devices like Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN). Loss breakdown analysis for each switches and diodes in both topology are presented for different switching frequency and loading condition. Evaluation is mainly done with the help of MATLAB, and LTSpice. Comparison of losses for different switching frequency for different switches are done for both topologies. The result of loss estimation obtained from simulation and m-file is approximately the same. The result shows that GaN and SiC based converter is more efficient than Si based NPC and T-Type converter.","PeriodicalId":422853,"journal":{"name":"2020 IEEE 9th Power India International Conference (PIICON)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Loss Analysis of NPC and T-Type Three-Level Converter for Si, SiC, and GaN based Devices\",\"authors\":\"K. Kumari, Swagata Mapa, R. Maheshwari\",\"doi\":\"10.1109/PIICON49524.2020.9112873\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multilevel converters are widely used for its significant benefit of low harmonics and reduced switching losses compared to two-level converter. This paper presents a comparative evaluation of loss of two three-level inverter topologies, namely Neutral Point Clamped Converter (NPC) and T-type converter. The loss analysis are done for both topologies based on different devices like Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN). Loss breakdown analysis for each switches and diodes in both topology are presented for different switching frequency and loading condition. Evaluation is mainly done with the help of MATLAB, and LTSpice. Comparison of losses for different switching frequency for different switches are done for both topologies. The result of loss estimation obtained from simulation and m-file is approximately the same. The result shows that GaN and SiC based converter is more efficient than Si based NPC and T-Type converter.\",\"PeriodicalId\":422853,\"journal\":{\"name\":\"2020 IEEE 9th Power India International Conference (PIICON)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 9th Power India International Conference (PIICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PIICON49524.2020.9112873\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 9th Power India International Conference (PIICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PIICON49524.2020.9112873","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

与双电平变换器相比,多电平变换器具有低谐波和减少开关损耗的显著优点,因此得到了广泛的应用。本文对中性点箝位变换器(NPC)和t型变换器两种三电平逆变器拓扑的损耗进行了比较评估。损耗分析是基于硅(Si)、碳化硅(SiC)和氮化镓(GaN)等不同器件的两种拓扑结构进行的。在不同的开关频率和负载条件下,对两种拓扑下的开关和二极管进行了损耗击穿分析。评估主要借助MATLAB和LTSpice完成。比较了两种拓扑结构下不同开关频率下的损耗。仿真得到的损耗估计结果与m文件的估计结果基本一致。结果表明,GaN和SiC基变换器比Si基NPC和t型变换器效率更高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Loss Analysis of NPC and T-Type Three-Level Converter for Si, SiC, and GaN based Devices
Multilevel converters are widely used for its significant benefit of low harmonics and reduced switching losses compared to two-level converter. This paper presents a comparative evaluation of loss of two three-level inverter topologies, namely Neutral Point Clamped Converter (NPC) and T-type converter. The loss analysis are done for both topologies based on different devices like Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN). Loss breakdown analysis for each switches and diodes in both topology are presented for different switching frequency and loading condition. Evaluation is mainly done with the help of MATLAB, and LTSpice. Comparison of losses for different switching frequency for different switches are done for both topologies. The result of loss estimation obtained from simulation and m-file is approximately the same. The result shows that GaN and SiC based converter is more efficient than Si based NPC and T-Type converter.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
An Improved Grid Synchronization Method of Grid-Interactive Power Converter System During Distorted Grid Conditions Design and Implementation of Biquad Filter for Shunt Compensation under Normal and Distorted Grid Conditions High Voltage Gain DC-DC Non-Isolated Converter with Generalized Stages Irregular-shaped Particle Motion and Charge Transfer Mechanism in Transformer Oil under Varying Field Reduce, Recycle And Reuse First Ever Initiative By Any Haryana Govt. Power Utility And Its Outcomes
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1