三维多桥道MOSFET (MBCFET)在块状硅衬底上的制备

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367812

S. Lee, E. Yoon, Sung-min Kim, C. Oh, Ming Li, Dong-Won Kim, I. Chung, Donggun Park, Kinam Kim

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引用次数: 8

摘要

在本文中，我们展示了一种新的单桥通道MOSFET (SBCFET)和MBCFET，在块硅衬底上，用于sub-90 nm一代，使用SiGe/Si/SiGe/Si层的多外延生长和damascene栅极工艺。薄体MBCFET的双栅极结构有效地抑制了短通道效应，而无需任何晕注入，提供了超过ITRS路线图所需值的驱动电流。MBCFET是具有高可扩展性的高性能应用程序中最有前途的候选者之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Three-dimensional multi-bridge-channel MOSFET (MBCFET) fabricated on bulk Si-substrate

In this paper, we demonstrate a novel single-bridge-channel MOSFET (SBCFET) and MBCFET, on a bulk Si-substrate, for the sub-90 nm generation, by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and a damascene gate process. The double-gate structure of the MBCFET with thin body suppresses the short channel effects effectively without any halo implantation, providing a drive current that exceeds the required value of the ITRS roadmap. The MBCFET is one of the most promising candidates for high performance applications with high scalability.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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