氧化铜薄膜微观结构与气敏响应的关系

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI:10.1109/SMELEC.2014.6920788

J. W. Low, N. Nayan, M. Z. Sahdan, M. K. Ahmad, A. Shakaff, A. Zakaria, A. Zain

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引用次数: 1

摘要

采用射频磁控溅射技术，在0、4、8和16 sccm不同氧流量下，在硅片上溅射铜靶，制备了氧化铜气体传感器。氩气流量、射频功率、工作压力和衬底偏置电压分别为50 sccm、400 W、22.5 mTorr和-40 V。研究了不同氧流量对氧化铜气体传感器时间响应的影响。此外，还考虑了氧化铜薄膜的微观结构和I-V特性的影响。结果表明，与0、4和16 sccm下的氧化铜气体传感器相比，在8 sccm下制备的氧化铜气体传感器的响应性能为0.024V/s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Correlation between the microstructure of copper oxide thin film and its gas sensing response

Copper oxide gas sensor was prepared on silicon wafer by sputtering of copper target at different oxygen flow rate of 0, 4, 8 and 16 sccm using RF magnetron sputtering technique. Argon flow rate, RF power, working pressure and substrate bias voltage were fixed at 50 sccm, 400 W, 22.5 mTorr and -40 V, respectively. The effect of varying the oxygen flow rate towards the time response of the copper oxide gas sensor was investigated. In addition, the influence of the copper oxide thin films microstructure and I-V characteristic was also considered. Based on the result, copper oxide gas sensor fabricated at 8 sccm of oxygen flow rate provide a better response of 0.024V/s compare to those fabricated at 0, 4 and 16 sccm.

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2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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