基于量子破折号的1540 ~ 1645 nm连续VCSEL发射

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562594

C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre

{"title":"基于量子破折号的1540 ~ 1645 nm连续VCSEL发射","authors":"C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre","doi":"10.1109/ICIPRM.2013.6562594","DOIUrl":null,"url":null,"abstract":"We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1540 to 1645 nm continuous VCSEL emission based on quantum dashes\",\"authors\":\"C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre\",\"doi\":\"10.1109/ICIPRM.2013.6562594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562594\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

报道了一种基于InP衬底的光激发InAs量子冲刺垂直腔面发射激光器。通过引入楔形微腔设计，我们获得了沿晶圆谐振波长的空间依赖性，使我们能够监测增益材料带宽。在本文中，我们展示了在整个晶圆上从1645 nm到1540 nm的连续可变VCSEL发射，这是使用优化量子划提供的重要和宽增益的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1540 to 1645 nm continuous VCSEL emission based on quantum dashes

We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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