{"title":"主要杂质、氧、碳浓度分布的改善","authors":"V. Vanca, Z. Schlett, M. Dinu, V. Enache","doi":"10.1109/SMICND.1996.557409","DOIUrl":null,"url":null,"abstract":"In order to improve the axial distribution for the main impurities, oxygen and carbon concentration, in Cz silicon single crystals, the authors have established a computer numerical method to reduce the scattering area for values along the ingot by using different pulling rates.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Distribution improvement for main impurity, oxygen and carbon concentration in Czochralski silicon single crystals\",\"authors\":\"V. Vanca, Z. Schlett, M. Dinu, V. Enache\",\"doi\":\"10.1109/SMICND.1996.557409\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to improve the axial distribution for the main impurities, oxygen and carbon concentration, in Cz silicon single crystals, the authors have established a computer numerical method to reduce the scattering area for values along the ingot by using different pulling rates.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557409\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557409","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Distribution improvement for main impurity, oxygen and carbon concentration in Czochralski silicon single crystals
In order to improve the axial distribution for the main impurities, oxygen and carbon concentration, in Cz silicon single crystals, the authors have established a computer numerical method to reduce the scattering area for values along the ingot by using different pulling rates.
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