解决障碍,实现最佳的DDR性能

Amit Pal, A. Sinha, Abhinav Gaur
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引用次数: 0

摘要

随着技术的进步,处理器的速度日益提高,内存供应商被迫提出新的解决方案,以匹配处理器的速度,而不会影响整个系统的效率。这就是为什么行业已经从SDRAM时代转移到DDR4时代,内存的运行速度超过3GHz。DDR存储设备已被制造商优化为最大速度和最低功耗,但这些是否足以从任何SOC中获得最佳效果?在内存控制器和SOC级别上存在几个参数,这些参数可能会以更大的方式影响性能,如果不适当地加以注意,可能会导致系统效率低下。如果不优化这些参数,就不可能从它所设计的内存中获得最佳结果。本文对这些参数进行了分析,并给出了通过优化这些参数可以显著提高DDR性能的一些结果。本文还讨论了图形控制器访问DDR3内存的系统级场景,以及如何在给定周期内提高其读/写性能。它还描述了在硬件中使用的不同分析器,以有效的方式测量性能。
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Tackling Roadblocks to Achieve Optimum DDR Performance
As the processor speed is increasing day by day with the advancement in technology, memory vendors are forced to come-up with newer solutions which could match the processor speed without impacting the overall system efficiency. That's why industry has moved from SDRAM era to DDR4 era where memory is running at a speed more than 3GHz. DDR memory devices have been optimized for maximum speed and minimum power possible by the manufacturers, but are these enough to get the best out of any SOC? There are several parameters present at memory controller and SOC level which could impact the performance in a greater way and if they are not taken care appropriately, it could result into an inefficient system. Without optimizing those parameters, it is impossible to get the best outcome from the memory it is designed for. This paper throws light on those parameters and shows some result that how significantly DDR performance improves by optimizing those parameters. This paper also talks about system level scenarios where graphic controller is accessing DDR3 memory and how its read/write performance was increased within given cycles. It also describes different profilers used in hardware to measure the performance in an efficient manner.
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