W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. Koch
{"title":"InGaN量子阱激光器的增益理论","authors":"W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. Koch","doi":"10.1109/LEOSST.1997.619253","DOIUrl":null,"url":null,"abstract":"To analyze experimental results in group-III nitride lasers, it is necessary to be able to predict their gain spectra accurately. Both excitons and electron hole plasma play important roles in the optical properties of group-III nitride compounds, even under typical lasing conditions of high carrier density and high temperature. Also, inhomogeneous broadening is present, due to localization effects from dimensional or compositional variations in the quantum wells. This paper describes a consistent treatment of the above effects.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"210 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Theory of gain in InGaN quantum well lasers\",\"authors\":\"W. Chow, A. F. Wright, A. Girndt, F. Jahnke, S. Koch\",\"doi\":\"10.1109/LEOSST.1997.619253\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To analyze experimental results in group-III nitride lasers, it is necessary to be able to predict their gain spectra accurately. Both excitons and electron hole plasma play important roles in the optical properties of group-III nitride compounds, even under typical lasing conditions of high carrier density and high temperature. Also, inhomogeneous broadening is present, due to localization effects from dimensional or compositional variations in the quantum wells. This paper describes a consistent treatment of the above effects.\",\"PeriodicalId\":344325,\"journal\":{\"name\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"volume\":\"210 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1997.619253\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619253","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
To analyze experimental results in group-III nitride lasers, it is necessary to be able to predict their gain spectra accurately. Both excitons and electron hole plasma play important roles in the optical properties of group-III nitride compounds, even under typical lasing conditions of high carrier density and high temperature. Also, inhomogeneous broadening is present, due to localization effects from dimensional or compositional variations in the quantum wells. This paper describes a consistent treatment of the above effects.
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