1.3 /spl mu/m高T/sub /应变MQW激光器，在异质外延InGaAs缓冲层上使用AlGaInAs SCH层

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553753

H. Kurakake, T. Uchida, T. Higashi, S. Ogita, M. Kobayashi

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引用次数: 4

摘要

在异质外延InGaAs QW缓冲层上制备了具有AlGaInAs SCH层的1.3 /spl mu/m InGaP包层激光器。由于高光约束，该激光器显示出110 K的高特征温度T/sub /。

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1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer

The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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