Injune Yeo, Sang-gyun Gi, Jung-gyun Kim, Byung-geun Lee
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引用次数: 0

摘要

提出了一种基于cmos的电阻计算元件(RCE),该元件可集成在交叉棒阵列中。RCE成功地解决了现有忆阻器件的硬件限制,如电导的动态范围、I-V非线性和开/关比,而与其他CMOS实现相比,没有增加硬件复杂性。RCE采用65nm标准CMOS工艺设计,并进行了SPICE模拟以评估RCE的可行性和功能。此外,还设计了一个脉冲神经网络,利用RCE交叉棒阵列进行仿真,验证了RCE的工作原理。
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A CMOS-based Resistive Crossbar Array with Pulsed Neural Network for Deep Learning Accelerator
A CMOS-based resistive computing element (RCE), which can be integrated in a crossbar array, is presented. The RCE successfully solves the hardware constraints of the existing memristive devices such as dynamic ranges of conductance, I-V nonlinearity, and on/off ratio without increasing hardware complexity compared to other CMOS implementations. The RCE has been designed using a 65nm standard CMOS process and SPICE simulations have been performed to evaluate feasibility and functionality of the RCE. In addition, a pulsed neural network employing an RCE crossbar array has also been designed and simulated to verify the operation of the RCE.
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