{"title":"用于VHF/UHF的宽带高功率EBS放大器","authors":"D.H. Smith, L. Roberts, R. Knight","doi":"10.1109/IEDM.1977.189186","DOIUrl":null,"url":null,"abstract":"This paper describes an EBS amplifier for high power, broadband operation in the VHF/UHF frequency bands. The wideband EBS uses a deflected beam configuration with the semiconductor target internally interconnected to provide Class B operation. The electrical and mechanical design of this amplifier are described as well as representative performance data. To date, over 500W CW has been achieved at 50 MHz, and a bandwidth of 30-350 MHz has been achieved at 300 W CW. Further improvements in these performance levels are expected in the next few months leading to devices capable of 500W CW output over a 400 MHz band. Overall efficiencies in excess of 50% have been demonstrated, and typical power gain is in excess of 20dB. Linearity, intermodulation distortion, and harmonic content are described as well as life test data which predicts a life expectancy well in excess of 20,000 hours.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A broadband high power EBS amplifier for VHF/UHF\",\"authors\":\"D.H. Smith, L. Roberts, R. Knight\",\"doi\":\"10.1109/IEDM.1977.189186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes an EBS amplifier for high power, broadband operation in the VHF/UHF frequency bands. The wideband EBS uses a deflected beam configuration with the semiconductor target internally interconnected to provide Class B operation. The electrical and mechanical design of this amplifier are described as well as representative performance data. To date, over 500W CW has been achieved at 50 MHz, and a bandwidth of 30-350 MHz has been achieved at 300 W CW. Further improvements in these performance levels are expected in the next few months leading to devices capable of 500W CW output over a 400 MHz band. Overall efficiencies in excess of 50% have been demonstrated, and typical power gain is in excess of 20dB. Linearity, intermodulation distortion, and harmonic content are described as well as life test data which predicts a life expectancy well in excess of 20,000 hours.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes an EBS amplifier for high power, broadband operation in the VHF/UHF frequency bands. The wideband EBS uses a deflected beam configuration with the semiconductor target internally interconnected to provide Class B operation. The electrical and mechanical design of this amplifier are described as well as representative performance data. To date, over 500W CW has been achieved at 50 MHz, and a bandwidth of 30-350 MHz has been achieved at 300 W CW. Further improvements in these performance levels are expected in the next few months leading to devices capable of 500W CW output over a 400 MHz band. Overall efficiencies in excess of 50% have been demonstrated, and typical power gain is in excess of 20dB. Linearity, intermodulation distortion, and harmonic content are described as well as life test data which predicts a life expectancy well in excess of 20,000 hours.