基于SiC双极技术的215W脉冲A类超高频功率放大

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367897

Chih-Fang Huang, I. Perez, F. Zhao, J. Torvik, R. Irwin, K. Torvik, F. Abrhaley, B. van Zeghbroeck

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引用次数: 8

摘要

设计并制作了多指结构的4H-SiC bjt。0.52 mm/sup /有源面积的大型器件显示DC增益约为18。采用单单元大器件，设计了450mhz的A类功率放大器。输入端的匹配是通过并联电容器和传输线完成的。该器件偏置在V/sub CE/=180 V，脉冲占空比为0.1%，以避免自加热。最大输出功率为215 W，功率增益为7.5 dB，对应于4.3 W/mm的功率密度(按发射极指长归一化)。

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215W pulsed class A UHF power amplification based on SiC bipolar technology

4H-SiC BJTs with multiple finger structure were designed and fabricated. Large devices with 0.52 mm/sup 2/ active area show DC gain around 18. A class A power amplifier is designed at 450 MHz using a single cell large device. Matching at the input is done with a parallel capacitor and a transmission line. The device is biased at V/sub CE/=180 V and pulsed with 0.1 % duty cycle to avoid self-heating. A maximum output power of 215 W is achieved with a power gain of 7.5 dB, corresponding to a power density of 4.3 W/mm normalized to emitter finger length.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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