单层二维过渡金属二硫族化合物的光致发光量子产率和长激子辐射寿命

N. Mohamed, Feijiu Wang, Sandhaya Koirala, HongEn Lim, S. Mouri, Y. Miyauchi, K. Matsuda
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引用次数: 0

摘要

半导体过渡金属二硫族化合物(TMDs)由于其在基础物理和光电器件方面的潜在应用而引起了广泛的研究兴趣。了解它的光致发光量子产率及其基本激发激子(电子-空穴对)的辐射寿命是非常重要的。我们通过静态和时间分辨PL光谱在室温下实验评估了单层WSe2的二维半导体tmd的本征激子辐射寿命。为了计算辐射寿命,我们还使用标准参考荧光染料的相对方法测量了PL的量子产率。从PL的量子产率~ 1%和PL的衰减时间几百ps计算出激子的辐射寿命~40 ns。这一辐射寿命值为十分之一ns,表明暗态和激子的有限相干长度(面积)的贡献为几nm。
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Photoluminescence quantum yield and long exciton radiative lifetime in monolayer two-dimensional transition metal dichalcogenides
Semiconducting transition metal dichalcogenides (TMDs) have attracted great research interests due to both from fundamental physics and their interesting potential applications of optoelectronic devices. It is very crucial to know its photoluminescence (PL) quantum yield, concurrently with the radiative lifetimes of its elementary excitation, exciton (electron-hole pair). We have experimentally evaluated intrinsic exciton radiative lifetime of 2D (two-dimensional) semiconductor TMDs of monolayer WSe2 from static and time-resolved PL spectroscopy at room temperature. In order to calculate the radiative lifetime, we also employed PL quantum yield measurements using relative method with standard reference fluorescent dye. The exciton radiative lifetime of ~40 ns was evaluated from PL quantum yield of ~1 % and PL decay time of several hundred ps. This value of radiative lifetime of several tenth ns suggests the contribution of dark states and finite exciton coherence length (area) of several nm.
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