N. Mohamed, Feijiu Wang, Sandhaya Koirala, HongEn Lim, S. Mouri, Y. Miyauchi, K. Matsuda
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Photoluminescence quantum yield and long exciton radiative lifetime in monolayer two-dimensional transition metal dichalcogenides
Semiconducting transition metal dichalcogenides (TMDs) have attracted great research interests due to both from fundamental physics and their interesting potential applications of optoelectronic devices. It is very crucial to know its photoluminescence (PL) quantum yield, concurrently with the radiative lifetimes of its elementary excitation, exciton (electron-hole pair). We have experimentally evaluated intrinsic exciton radiative lifetime of 2D (two-dimensional) semiconductor TMDs of monolayer WSe2 from static and time-resolved PL spectroscopy at room temperature. In order to calculate the radiative lifetime, we also employed PL quantum yield measurements using relative method with standard reference fluorescent dye. The exciton radiative lifetime of ~40 ns was evaluated from PL quantum yield of ~1 % and PL decay time of several hundred ps. This value of radiative lifetime of several tenth ns suggests the contribution of dark states and finite exciton coherence length (area) of several nm.