{"title":"用于短路保护的igbt电流传感","authors":"S. P. Robb, A.A. Taomoto, S. Tu","doi":"10.1109/ISPSD.1994.583656","DOIUrl":null,"url":null,"abstract":"Short circuit protection can be provided for IGBTs by using a current-sensing scheme. The performance and accuracy of integrated current sensors on IGBTs can be affected by the layout of the sense device. Data is presented on current-sense IGBTs and an improved layout is proposed to increase the accuracy of the sensor.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Current sensing in IGBTs for short-circuit protection\",\"authors\":\"S. P. Robb, A.A. Taomoto, S. Tu\",\"doi\":\"10.1109/ISPSD.1994.583656\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Short circuit protection can be provided for IGBTs by using a current-sensing scheme. The performance and accuracy of integrated current sensors on IGBTs can be affected by the layout of the sense device. Data is presented on current-sense IGBTs and an improved layout is proposed to increase the accuracy of the sensor.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583656\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583656","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current sensing in IGBTs for short-circuit protection
Short circuit protection can be provided for IGBTs by using a current-sensing scheme. The performance and accuracy of integrated current sensors on IGBTs can be affected by the layout of the sense device. Data is presented on current-sense IGBTs and an improved layout is proposed to increase the accuracy of the sensor.