溶液处理OTFTs具有1 cm/sup 2/ V-s的迁移率

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367900

C. Kuo, M. Payne, J. Anthony, T. Jackson

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引用次数: 2

摘要

本文提出了一种基于三乙基硅乙基噻吩并五烯(TES噻吩并五烯)的溶液加工有机薄膜晶体管(OTFTs)，其场效应迁移率为1 cm/sup 2/ V-s。该器件还具有开/关电流比bbb10 /sup 7/和亚阈值斜率接近1 V/ 10年。据我们所知，这是迄今为止证明的迁移率最高的解决方案处理的otft，也是第一个性能可与热蒸发五苯器件相媲美的器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Solution processed OTFTs with 1 cm/sup 2//V-s mobility

This work presents fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl thienyl pentacene (TES thienyl pentacene) with 1 cm/sup 2//V-s field-effect mobility. The devices also have an on/off current ratio >10/sup 7/ and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution processed OTFTs demonstrated to date and the first with performance comparable to thermally evaporated pentacene devices.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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