{"title":"用于数字和模拟技术的最先进的ESD保护设备和技术","authors":"A. Salman, F. Farbiz, A. Appaswamy","doi":"10.1109/S3S.2016.7804383","DOIUrl":null,"url":null,"abstract":"This paper is a review of the latest advances in ESD protection for analog and digital technologies. The paper will introduce the latest ESD protection devices for FinFET and FDSOI technologies such as Field effect diode, Field effect resistor. We will introduce an example of innovation for analog ESD protection focusing on system level automotive applications namely Mutual ballasting layout technique.","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"State-of-the-art ESD protection devices and techniques for digital and analog technologies\",\"authors\":\"A. Salman, F. Farbiz, A. Appaswamy\",\"doi\":\"10.1109/S3S.2016.7804383\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is a review of the latest advances in ESD protection for analog and digital technologies. The paper will introduce the latest ESD protection devices for FinFET and FDSOI technologies such as Field effect diode, Field effect resistor. We will introduce an example of innovation for analog ESD protection focusing on system level automotive applications namely Mutual ballasting layout technique.\",\"PeriodicalId\":145660,\"journal\":{\"name\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2016.7804383\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
State-of-the-art ESD protection devices and techniques for digital and analog technologies
This paper is a review of the latest advances in ESD protection for analog and digital technologies. The paper will introduce the latest ESD protection devices for FinFET and FDSOI technologies such as Field effect diode, Field effect resistor. We will introduce an example of innovation for analog ESD protection focusing on system level automotive applications namely Mutual ballasting layout technique.