用于数字和模拟技术的最先进的ESD保护设备和技术

A. Salman, F. Farbiz, A. Appaswamy
{"title":"用于数字和模拟技术的最先进的ESD保护设备和技术","authors":"A. Salman, F. Farbiz, A. Appaswamy","doi":"10.1109/S3S.2016.7804383","DOIUrl":null,"url":null,"abstract":"This paper is a review of the latest advances in ESD protection for analog and digital technologies. The paper will introduce the latest ESD protection devices for FinFET and FDSOI technologies such as Field effect diode, Field effect resistor. We will introduce an example of innovation for analog ESD protection focusing on system level automotive applications namely Mutual ballasting layout technique.","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"State-of-the-art ESD protection devices and techniques for digital and analog technologies\",\"authors\":\"A. Salman, F. Farbiz, A. Appaswamy\",\"doi\":\"10.1109/S3S.2016.7804383\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is a review of the latest advances in ESD protection for analog and digital technologies. The paper will introduce the latest ESD protection devices for FinFET and FDSOI technologies such as Field effect diode, Field effect resistor. We will introduce an example of innovation for analog ESD protection focusing on system level automotive applications namely Mutual ballasting layout technique.\",\"PeriodicalId\":145660,\"journal\":{\"name\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2016.7804383\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文综述了模拟和数字技术中ESD保护的最新进展。本文将介绍用于FinFET和FDSOI技术的最新ESD保护器件,如场效应二极管、场效应电阻。我们将介绍一个专注于系统级汽车应用的模拟ESD保护创新示例,即相互镇流器布局技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
State-of-the-art ESD protection devices and techniques for digital and analog technologies
This paper is a review of the latest advances in ESD protection for analog and digital technologies. The paper will introduce the latest ESD protection devices for FinFET and FDSOI technologies such as Field effect diode, Field effect resistor. We will introduce an example of innovation for analog ESD protection focusing on system level automotive applications namely Mutual ballasting layout technique.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Ultra low energy FDSOI asynchronous reconfiguration network for an IoT wireless sensor network node Challenges and opportunities of vertical FET devices using 3D circuit design layouts Correlations between plasma induced damage and negative bias temperature instability in 65 nm bulk and thin-BOX FDSOI processes Influence of source-drain engineering and temperature on split-capacitance characteristics of FDSOI p-i-n gated diodes Sub-pJ per operation scalable computing: The PULP experience
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1