{"title":"TCAD分析宽带功率放大器RF-LDMOS的优势","authors":"A. Kashif, S. Azam, K. Hayat, M. Imran","doi":"10.1109/IBCAST.2013.6512185","DOIUrl":null,"url":null,"abstract":"Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Zf) by providing a desired RF output power of 30.8 dBm.","PeriodicalId":276834,"journal":{"name":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advantage of TCAD to analyze RF-LDMOS for the broadband power amplifier\",\"authors\":\"A. Kashif, S. Azam, K. Hayat, M. Imran\",\"doi\":\"10.1109/IBCAST.2013.6512185\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Zf) by providing a desired RF output power of 30.8 dBm.\",\"PeriodicalId\":276834,\"journal\":{\"name\":\"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IBCAST.2013.6512185\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IBCAST.2013.6512185","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advantage of TCAD to analyze RF-LDMOS for the broadband power amplifier
Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Zf) by providing a desired RF output power of 30.8 dBm.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
