A. Ryabchikov, I. Stepanov, D. Sivin, P. Ananin, S. V. Dektyarev
{"title":"高频短脉冲偏置电位作为离子束和等离子体处理导电和介电材料的通用方法,利用真空电弧和烧蚀等离子体","authors":"A. Ryabchikov, I. Stepanov, D. Sivin, P. Ananin, S. V. Dektyarev","doi":"10.1109/IFOST.2012.6357776","DOIUrl":null,"url":null,"abstract":"The results of investigations of applicability of the method of high-frequency short-pulsed plasma-immersion ion implantation and (or) coating deposition using vacuum-arc and ablation plasma to conductive and dielectric substrates are presented. It is shown that ion implantation with the ion sputtering compensation by coating deposition from plasma and ion-assisted coating deposition can be realized for the metal and dielectric samples through alteration of the negative bias potential within 0-4·103 V, with the pulse repetition rate of (1- 4.4)·105 pps, pulse duration 0.5-2 μs and duty factor of 0.1-0.9. It is experimentally established that at coating deposition from ablation plasma obtained by the influence of the high-intensity ion beam (j = 3·102 A/m2, E = 350 keV, τ = 90 ns) on the target, the micro-arc effects on the substrate surface are observed at a dc bias potential of more than -60 V. The transition to pulses of 0.5 μs duration enabled to increase the bias potential up to -4 kV. The possibility of application of the high-frequency, short-pulse bias potentials for the formation of coatings from vacuum-arc and ablation plasma with high adhesive strength and improved exploitation characteristics is discussed.","PeriodicalId":319762,"journal":{"name":"2012 7th International Forum on Strategic Technology (IFOST)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-frequency short-pulse bias potential as a universal method of ion-beam and plasma treatment of conductive and dielectric materials using vacuum-arc and ablation plasma\",\"authors\":\"A. Ryabchikov, I. Stepanov, D. Sivin, P. Ananin, S. V. Dektyarev\",\"doi\":\"10.1109/IFOST.2012.6357776\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of investigations of applicability of the method of high-frequency short-pulsed plasma-immersion ion implantation and (or) coating deposition using vacuum-arc and ablation plasma to conductive and dielectric substrates are presented. It is shown that ion implantation with the ion sputtering compensation by coating deposition from plasma and ion-assisted coating deposition can be realized for the metal and dielectric samples through alteration of the negative bias potential within 0-4·103 V, with the pulse repetition rate of (1- 4.4)·105 pps, pulse duration 0.5-2 μs and duty factor of 0.1-0.9. It is experimentally established that at coating deposition from ablation plasma obtained by the influence of the high-intensity ion beam (j = 3·102 A/m2, E = 350 keV, τ = 90 ns) on the target, the micro-arc effects on the substrate surface are observed at a dc bias potential of more than -60 V. The transition to pulses of 0.5 μs duration enabled to increase the bias potential up to -4 kV. The possibility of application of the high-frequency, short-pulse bias potentials for the formation of coatings from vacuum-arc and ablation plasma with high adhesive strength and improved exploitation characteristics is discussed.\",\"PeriodicalId\":319762,\"journal\":{\"name\":\"2012 7th International Forum on Strategic Technology (IFOST)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th International Forum on Strategic Technology (IFOST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFOST.2012.6357776\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th International Forum on Strategic Technology (IFOST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFOST.2012.6357776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-frequency short-pulse bias potential as a universal method of ion-beam and plasma treatment of conductive and dielectric materials using vacuum-arc and ablation plasma
The results of investigations of applicability of the method of high-frequency short-pulsed plasma-immersion ion implantation and (or) coating deposition using vacuum-arc and ablation plasma to conductive and dielectric substrates are presented. It is shown that ion implantation with the ion sputtering compensation by coating deposition from plasma and ion-assisted coating deposition can be realized for the metal and dielectric samples through alteration of the negative bias potential within 0-4·103 V, with the pulse repetition rate of (1- 4.4)·105 pps, pulse duration 0.5-2 μs and duty factor of 0.1-0.9. It is experimentally established that at coating deposition from ablation plasma obtained by the influence of the high-intensity ion beam (j = 3·102 A/m2, E = 350 keV, τ = 90 ns) on the target, the micro-arc effects on the substrate surface are observed at a dc bias potential of more than -60 V. The transition to pulses of 0.5 μs duration enabled to increase the bias potential up to -4 kV. The possibility of application of the high-frequency, short-pulse bias potentials for the formation of coatings from vacuum-arc and ablation plasma with high adhesive strength and improved exploitation characteristics is discussed.