太赫兹应用的硅CMOS/SiGe收发器电路

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160166

U. Pfeiffer

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引用次数: 10

摘要

向太赫兹频率的推进为新兴应用和电路带来了挑战和机遇。在本文中，最近的尝试操作SiGe和CMOS技术超越其晶体管截止频率将被提出。其中，电路设计包括单片集成太赫兹CMOS焦平面阵列和820 GHz次谐波泵浦SiGe HBT成像芯片组，包括集成天线。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Silicon CMOS/SiGe transceiver circuits for THz applications

The push towards terahertz frequencies presents both challenges and opportunities for emerging applications and circuit. In this paper, recent attempts to operate SiGe and CMOS technologies beyond their transistor cut-off frequencies will be presented. Among others, the circuit designs include monolithically integrated THz CMOS focal-plane arrays and 820 GHz sub-harmonically pumped SiGe HBT imaging chip-sets including integrated antennas.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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