基于pcm的神经形态电路轻量刷新方法

Megumi Ito, M. Ishii, A. Okazaki, Sangbum Kim, J. Okazawa, A. Nomura, K. Hosokawa, W. Haensch
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引用次数: 7

摘要

相变存储器(PCM)作为一种可扩展的低功耗神经形态电路的突触纳米器件正在被探索。在学习过程中,我们提出了一种新颖且轻量级的方法来刷新PCM细胞在其最大电导饱和后的状态。我们的学习系统是一个基于事件的受限玻尔兹曼机,它采用了一种改进的对比发散算法,具有峰值时间相关的可塑性更新规则。通过使用我们的基于事件的神经形态电路模拟器和MNIST手写数字数据集,我们表明我们的刷新方法通过减少SET和RESET编程脉冲的数量来降低功耗,同时保持较高的学习精度。
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Lightweight Refresh Method for PCM-based Neuromorphic Circuits
Phase change memory (PCM) is being explored as a synaptic nanodevice for scalable and low-power neuromorphic circuits. We present a novel and lightweight method to refresh PCM cells after they saturate at their maximum conductance during the learning process. Our learning system is an event-based Restricted Boltzmann Machine with Spike Time Dependent Plasticity update rule using a modified contrastive divergence algorithm. By using our event-based neuromorphic circuit simulator and the MNIST handwritten digit dataset, we show that our refresh method reduces power consumption by decreasing the number of SET and RESET programming pulses while maintaining high learning accuracy.
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