V. Ursaki, I. Tiginyanu, V. Ichizli, A. Terletsky, N. Pyshnaya, S. Radautsan
{"title":"InP单晶中Zn/sup +//P/sup +/和Zn/sup +//As/sup +/共注入","authors":"V. Ursaki, I. Tiginyanu, V. Ichizli, A. Terletsky, N. Pyshnaya, S. Radautsan","doi":"10.1109/SMICND.1996.557405","DOIUrl":null,"url":null,"abstract":"The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures T/sub ann/>600/spl deg/C.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"296 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals\",\"authors\":\"V. Ursaki, I. Tiginyanu, V. Ichizli, A. Terletsky, N. Pyshnaya, S. Radautsan\",\"doi\":\"10.1109/SMICND.1996.557405\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures T/sub ann/>600/spl deg/C.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"296 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557405\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals
The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures T/sub ann/>600/spl deg/C.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
