{"title":"超低直流功率砷化镓HBT s波段低噪声放大器","authors":"K. Kobayashi, A. Oki, L. Tran, D. Streit","doi":"10.1109/MCS.1995.470988","DOIUrl":null,"url":null,"abstract":"We report on a 2.1 mW low DC power GaAs HBT LNA with 2.0 dB noise figure and 8.9 dB gain at 2 GHz. This amplifier achieves a Gain/NF/spl middot/P/sub dc/ ratio figure of merit of 2.10 (1/mW) which is the highest reported at S-band. Under low DC power bias of 2 V and 0.46 mA (0.92 mW), the amplifier achieves 5.2 dB gain, 3.01 dB noise figure and a Gain/P/sub dc/ figure of merit of 5.65 (dB/mW) which is also the highest reported in this frequency band. The HBT LNA consumes an area of 1.05/spl times/0.82 mm/sup 2/ and is fabricated using a relaxed 3 /spl mu/m emitter width low cost GaAs production foundry process. The high performance obtained from HBTs at vary low DC bias makes them attractive for portable wireless consumer applications.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"443 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Ultra-low DC power GaAs HBT S-band low noise amplifiers\",\"authors\":\"K. Kobayashi, A. Oki, L. Tran, D. Streit\",\"doi\":\"10.1109/MCS.1995.470988\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on a 2.1 mW low DC power GaAs HBT LNA with 2.0 dB noise figure and 8.9 dB gain at 2 GHz. This amplifier achieves a Gain/NF/spl middot/P/sub dc/ ratio figure of merit of 2.10 (1/mW) which is the highest reported at S-band. Under low DC power bias of 2 V and 0.46 mA (0.92 mW), the amplifier achieves 5.2 dB gain, 3.01 dB noise figure and a Gain/P/sub dc/ figure of merit of 5.65 (dB/mW) which is also the highest reported in this frequency band. The HBT LNA consumes an area of 1.05/spl times/0.82 mm/sup 2/ and is fabricated using a relaxed 3 /spl mu/m emitter width low cost GaAs production foundry process. The high performance obtained from HBTs at vary low DC bias makes them attractive for portable wireless consumer applications.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"443 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470988\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470988","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-low DC power GaAs HBT S-band low noise amplifiers
We report on a 2.1 mW low DC power GaAs HBT LNA with 2.0 dB noise figure and 8.9 dB gain at 2 GHz. This amplifier achieves a Gain/NF/spl middot/P/sub dc/ ratio figure of merit of 2.10 (1/mW) which is the highest reported at S-band. Under low DC power bias of 2 V and 0.46 mA (0.92 mW), the amplifier achieves 5.2 dB gain, 3.01 dB noise figure and a Gain/P/sub dc/ figure of merit of 5.65 (dB/mW) which is also the highest reported in this frequency band. The HBT LNA consumes an area of 1.05/spl times/0.82 mm/sup 2/ and is fabricated using a relaxed 3 /spl mu/m emitter width low cost GaAs production foundry process. The high performance obtained from HBTs at vary low DC bias makes them attractive for portable wireless consumer applications.<>
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