K. Sonoda, E. Tsukuda, S. Tsuda, Tomohiro Hayashi, Y. Akiyama, Y. Yamaguchi, T. Yamashita
{"title":"鳍角场增强对分闸单频单管晶体管程序特性的影响分析","authors":"K. Sonoda, E. Tsukuda, S. Tsuda, Tomohiro Hayashi, Y. Akiyama, Y. Yamaguchi, T. Yamashita","doi":"10.1109/SISPAD.2018.8551742","DOIUrl":null,"url":null,"abstract":"The effect of field enhancement at Fin corners on program characteristics of FinFET Split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed. The program characteristics using source-side injection (SSI) are found to be insensitive to the variation of the curvature radius at Fin corners, which shows the robustness of FinFET SG-MONOS to Fin shape variation inthe fabrication process.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of the Effect of Field Enhancement at Fin Corners on Program Characteristics of FinFET Split-Gate MONOS\",\"authors\":\"K. Sonoda, E. Tsukuda, S. Tsuda, Tomohiro Hayashi, Y. Akiyama, Y. Yamaguchi, T. Yamashita\",\"doi\":\"10.1109/SISPAD.2018.8551742\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of field enhancement at Fin corners on program characteristics of FinFET Split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed. The program characteristics using source-side injection (SSI) are found to be insensitive to the variation of the curvature radius at Fin corners, which shows the robustness of FinFET SG-MONOS to Fin shape variation inthe fabrication process.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551742\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551742","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of the Effect of Field Enhancement at Fin Corners on Program Characteristics of FinFET Split-Gate MONOS
The effect of field enhancement at Fin corners on program characteristics of FinFET Split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed. The program characteristics using source-side injection (SSI) are found to be insensitive to the variation of the curvature radius at Fin corners, which shows the robustness of FinFET SG-MONOS to Fin shape variation inthe fabrication process.
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