R. Rusev, G. Angelov, I. Ruskova, E. Gieva, D. Nikolov, M. Spasova, M. Hristov, R. Radonov
{"title":"无结晶体管纳米线特性随栅极长度的研究","authors":"R. Rusev, G. Angelov, I. Ruskova, E. Gieva, D. Nikolov, M. Spasova, M. Hristov, R. Radonov","doi":"10.23919/MIXDES52406.2021.9497541","DOIUrl":null,"url":null,"abstract":"Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications.","PeriodicalId":375541,"journal":{"name":"2021 28th International Conference on Mixed Design of Integrated Circuits and System","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of Nanowire Characteristics of a Junctionless Transistor Depending on the Gate Length\",\"authors\":\"R. Rusev, G. Angelov, I. Ruskova, E. Gieva, D. Nikolov, M. Spasova, M. Hristov, R. Radonov\",\"doi\":\"10.23919/MIXDES52406.2021.9497541\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications.\",\"PeriodicalId\":375541,\"journal\":{\"name\":\"2021 28th International Conference on Mixed Design of Integrated Circuits and System\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 28th International Conference on Mixed Design of Integrated Circuits and System\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIXDES52406.2021.9497541\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 28th International Conference on Mixed Design of Integrated Circuits and System","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES52406.2021.9497541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of Nanowire Characteristics of a Junctionless Transistor Depending on the Gate Length
Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications.
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