Manu Kashyap, Abhinav Joshi, A. Basu, Sakshi Leekha
{"title":"利用薄膜技术设计边缘镀SIW BPF","authors":"Manu Kashyap, Abhinav Joshi, A. Basu, Sakshi Leekha","doi":"10.1109/imarc49196.2021.9714622","DOIUrl":null,"url":null,"abstract":"A SIW based BPF using the thin film technology is showcased and design considerations are presented. Multiple BPFs were initially designed through 3D EM simulations to derive the equations for different parameters of the filter. A $\\mathbf{5}^{\\text{th}}$ order $32\\mathrm{GHz}-42.5\\mathrm{GHz}$ SIW BPF with FBW of 28.2% was achieved using this approach. A row of continuous vias on SIW BPF were replaced by an edge plating process. Simulation results of BPF hows an attenuation below 1dB in the passband ampersand out of band rejection of 30dB. The S11 at center frequency was $-19.5\\mathrm{~dB}$. The measured result shows a good correlation with the simulation results.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Edge Plated SIW BPF Using Thin Film Technology\",\"authors\":\"Manu Kashyap, Abhinav Joshi, A. Basu, Sakshi Leekha\",\"doi\":\"10.1109/imarc49196.2021.9714622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A SIW based BPF using the thin film technology is showcased and design considerations are presented. Multiple BPFs were initially designed through 3D EM simulations to derive the equations for different parameters of the filter. A $\\\\mathbf{5}^{\\\\text{th}}$ order $32\\\\mathrm{GHz}-42.5\\\\mathrm{GHz}$ SIW BPF with FBW of 28.2% was achieved using this approach. A row of continuous vias on SIW BPF were replaced by an edge plating process. Simulation results of BPF hows an attenuation below 1dB in the passband ampersand out of band rejection of 30dB. The S11 at center frequency was $-19.5\\\\mathrm{~dB}$. The measured result shows a good correlation with the simulation results.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of Edge Plated SIW BPF Using Thin Film Technology
A SIW based BPF using the thin film technology is showcased and design considerations are presented. Multiple BPFs were initially designed through 3D EM simulations to derive the equations for different parameters of the filter. A $\mathbf{5}^{\text{th}}$ order $32\mathrm{GHz}-42.5\mathrm{GHz}$ SIW BPF with FBW of 28.2% was achieved using this approach. A row of continuous vias on SIW BPF were replaced by an edge plating process. Simulation results of BPF hows an attenuation below 1dB in the passband ampersand out of band rejection of 30dB. The S11 at center frequency was $-19.5\mathrm{~dB}$. The measured result shows a good correlation with the simulation results.