J. Seo, U. Hommerich, M. Thaik, J. MacKenzie, C. R. Abernathy, J. Zavada
{"title":"基于掺铒氮化镓的光谱学及1.54 /spl mu/m发光器件","authors":"J. Seo, U. Hommerich, M. Thaik, J. MacKenzie, C. R. Abernathy, J. Zavada","doi":"10.1109/CLEOPR.1999.811415","DOIUrl":null,"url":null,"abstract":"GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.","PeriodicalId":408728,"journal":{"name":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spectroscopy and 1.54 /spl mu/m light emitting device based on erbium-doped gallium nitride\",\"authors\":\"J. Seo, U. Hommerich, M. Thaik, J. MacKenzie, C. R. Abernathy, J. Zavada\",\"doi\":\"10.1109/CLEOPR.1999.811415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.\",\"PeriodicalId\":408728,\"journal\":{\"name\":\"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOPR.1999.811415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.1999.811415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Spectroscopy and 1.54 /spl mu/m light emitting device based on erbium-doped gallium nitride
GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.
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